IXGH50N120C3 IXYS, IXGH50N120C3 Datasheet - Page 4

• Manufacturer Part Number: IXGH50N120C3
• Description: IGBT PT 1200V 50A TO-247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH50N120C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 460W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 64
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.1
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
1.00
0.10
0.01
100
60
55
50
45
40
35
30
25
20
15
10
10
5
0
0.0001
0
0
10
f
= 1 MHz
5
20
Fig. 7. Transconductance
10
30
Fig. 9. Capacitance
15
40
I
C
V
0.001
CE
- Amperes
50
20
- Volts
60
25
Fig. 11. Maximum Transient Thermal Impedance
70
C ies
C oes
C res
30
T
J
80
= - 40ºC
125ºC
25ºC
35
0.01
90
Pulse Width - Seconds
100
40
110
100
16
14
12
10
90
80
70
60
50
40
30
20
10
8
6
4
2
0
0
200
0
Fig. 10. Reverse-Bias Safe Operating Area
T
R
dV / dt < 10V / ns
V
I
I
20
0.1
J
G
C
G
CE
= 125ºC
= 2Ω
= 50A
= 10mA
= 600V
400
40
60
Fig. 8. Gate Charge
Q
600
G
80
- NanoCoulombs
V
CE
100
IXGH50N120C3
- Volts
800
1
120
IXYS REF: G_50N120C3(7N)6-03-08
140
1000
160
180
1200
200
10