IXBT20N300 IXYS, IXBT20N300 Datasheet - Page 4

• Manufacturer Part Number: IXBT20N300
• Description: IGBT 3000V 50A 250W TO268
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBT20N300

• Voltage - Collector Emitter Breakdown (max): 3000V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 20A
• Current - Collector (ic) (max): 50A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 3000
• Ic25, Tc=25°c, (a): 50
• Ic90, Tc=90°c, (a): -
• Ic110, Tc=110°c, (a): 20
• Vce(sat), Typ, Tj=25°c, (v): 3.2
• Tf Typ, Tj=25°c, (ns): 504
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.5
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
28
24
20
16
12
55
50
45
40
35
30
25
20
15
10
16
14
12
10
8
4
0
5
0
8
6
4
2
0
500
0
0
Fig. 11. Reverse-Bias Safe Operating Area
V
I
I
10
5
T
R
dV / dt < 10V / ns
C
G
CE
J
G
= 20A
= 10mA
= 125ºC
= 20Ω
= 1kV
10
20
1000
Fig. 7. Transconductance
15
30
Fig. 9. Gate Charge
Q
20
40
G
1500
- NanoCoulombs
I
C
V
CE
25
- Amperes
50
- Volts
30
60
T
J
2000
= - 40ºC
35
70
25ºC
40
80
125ºC
2500
45
90
100
50
3000
110
55
10,000
1,000
1.00
0.10
0.01
100
60
55
50
45
40
35
30
25
20
15
10
10
0.00001
5
0
0.0
0
f
= 1 MHz
Fig. 12. Maximum Transient Thermal
5
0.0001
0.5
Fig. 8. Forward Voltage Drop of
10
0.001
Fig. 10. Capacitance
1.0
Pulse Width - Seconds
Intrinsic Diode
15
Impedance
V
V
T
CE
F
J
- Volts
0.01
1.5
= 25ºC
20
- Volts
25
2.0
0.1
C ies
C oes
C res
IXBH20N300
IXBT20N300
30
T
J
= 125ºC
2.5
1
35
3.0
10
40