IXBT20N300 IXYS, IXBT20N300 Datasheet - Page 5

• Manufacturer Part Number: IXBT20N300
• Description: IGBT 3000V 50A 250W TO268
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBT20N300

• Voltage - Collector Emitter Breakdown (max): 3000V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 20A
• Current - Collector (ic) (max): 50A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 3000
• Ic25, Tc=25°c, (a): 50
• Ic90, Tc=90°c, (a): -
• Ic110, Tc=110°c, (a): 20
• Vce(sat), Typ, Tj=25°c, (v): 3.2
• Tf Typ, Tj=25°c, (ns): 504
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.5
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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Switching Times vs. Collector Current
Switching Times vs. Gate Resistance
R
V
V
t
T
V
G
GE
CE
35
r
J
CE
= 125ºC, V
= 10Ω
20
Rise Time vs. Junction Temperature
= 15V
= 1250V
= 1250V
15
Fig. 17. Resistive Turn-off
Fig. 15. Resistive Turn-on
45
Fig. 13. Resistive Turn-on
30
t
I
d(on)
C
GE
55
20
= 20A, 40A
T
= 15V
J
- - - -
- Degrees Centigrade
I
C
40
R
65
- Amperes
G
- Ohms
25
I
t
R
V
C
75
f
CE
50
G
T
I
= 20A
J
C
= 10Ω, V
= 1250V
= 125ºC, 25ºC
= 40A
30
85
60
GE
t
95
d(off)
= 15V
35
70
- - - -
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25
Switching Times vs. Junction Temperature
Switching Times vs. Gate Resistance
R
V
V
t
R
V
t
T
V
35
GE
CE
f
G
G
CE
f
J
CE
20
= 125ºC, V
= 10Ω
= 10Ω, V
= 15V
= 1250V
= 1250V
= 1250V
15
45
Rise Time vs. Collector Current
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
30
Fig. 14. Resistive Turn-on
55
GE
T
t
t
d(off)
d(off
GE
J
I
= 15V
- Degrees Centigrade
C
20
= 15V
)
= 20A
65
R
- - - -
- - - -
40
G
I
C
- Ohms
- Amperes
75
T
T
J
J
I
I
I
50
25
C
= 125ºC
= 25ºC
C
C
= 40A
= 20A
= 40A
85
60
95
30
IXBH20N300
105
IXBT20N300
70
115
35
IXYS REF: B_20N300(5P)03-10-09
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