STGF10NC60HD STMicroelectronics, STGF10NC60HD Datasheet - Page 3

• Manufacturer Part Number: STGF10NC60HD
• Description: IGBT N-CH 10A 600V TO-220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF10NC60HD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 5A
• Current - Collector (ic) (max): 9A
• Power - Max: 24W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 9A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 23W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

STGB10NC60HD - STGP10NC60HD - STGF10NC60HD
1
Electrical ratings
Table 2.
1. Calculated according to the iterative formula:
2. V
Table 3.
Symbol
Rthj-case
Rthj-amb
Symbol
V
I
P
V
I
I
CL
V
C
C
clamp
CES
I
TOT
T
ISO
GE
F
(1)
(1)
(2)
j
=80% of BVces, Tj=150°C, R
Collector-emitter voltage (V
Collector current (continuous) at T
Collector current (continuous) at T
Collector current (pulsed)
Diode RMS forward current at T
Gate-emitter voltage
Total dissipation at T
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T
Operating junction temperature
Absolute maximum ratings
Thermal resistance
Thermal resistance junction-case max
Thermal resistance junction-ambient max
C
=25°C)
Parameter
Parameter
C
I
C
G
(
= 25°C
T
=10Ω, V
C
)
=
GE
----------------------------------------------------------------------------------------------------- -
R
THJ C
= 0)
GE
C
–
=15V
= 25°C
C
C
×
= 25°C
= 100°C
T
V
JMAX
CESAT MAX
–
(
T
C
)
(
TO-220 / D²PAK
TO-220 / D²PAK
T
C
,
I
C
)
1.9
20
10
65
--
– 55 to 150
Value
Value
62.5
600
±20
40
10
TO-220FP
TO-220FP
Electrical ratings
2500
23
5
9
6
°C/W
°C/W
Unit
Unit
°C
W
V
A
A
A
A
V
V
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