STGF10NC60HD STMicroelectronics, STGF10NC60HD Datasheet - Page 4

• Manufacturer Part Number: STGF10NC60HD
• Description: IGBT N-CH 10A 600V TO-220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF10NC60HD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 5A
• Current - Collector (ic) (max): 9A
• Power - Max: 24W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 9A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 23W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
V
V
CASE
BR(CES)
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
g
Q
oes
ies
res
fs
ge
gc
g
=25°C unless otherwise specified)
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static
Dynamic
GE
GE
= 0)
= 0)
Parameter
Parameter
CE
= 0)
STGB10NC60HD - STGP10NC60HD - STGF10NC60HD
V
V
V
V
(see Figure 19)
I
V
V
V
V
V
V
C
GE
GE
CE
CE
GE
GE
CE
CE
CE
GE
CE
= 1mA
= V
= Max rating,T
=Max rating,T
= 15V, I
= 15V, I
= ±20V
= 25V, f = 1MHz,
= 0
= 390V, I
= 15V,
= 15V
Test conditions
Test conditions
GE
, I
,
I
C
C
C
C
= 5A
= 5A, Tc= 125°C
C
= 250 µA
= 5A
= 5A,
C
C
= 125°C
= 25°C
Min.
Min.
3.75
600
Typ.
Typ.
19.2
365
8.3
4.5
1.9
1.7
3.5
43
7
Max.
±100
Max.
5.75
150
2.5
1
Unit
Unit
mA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
V
V
S