STGF7NC60HD STMicroelectronics, STGF7NC60HD Datasheet - Page 5

• Manufacturer Part Number: STGF7NC60HD
• Description: IGBT N-CHAN 10A 600V TO220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF7NC60HD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 7A
• Current - Collector (ic) (max): 10A
• Power - Max: 25W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 25W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 10 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4354-5

Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
STGP7NC60HD - STGF7NC60HD - STGB7NC60HD
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Tem-
perature
Figure 8: Normalized Gate Threshold vs Tem-
perature
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