STGP19NC60HD STMicroelectronics, STGP19NC60HD Datasheet - Page 5

• Manufacturer Part Number: STGP19NC60HD
• Description: IGBT VERY FAST 600V 40A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP19NC60HD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 12A
• Current - Collector (ic) (max): 40A
• Power - Max: 130W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 130W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-8809-5; STGP19NC60HD

STGx19NC60HD, STGWA19NC60HD
Table 6.
Table 7.
1. Turn-off losses include also the tail of the collector current
Table 8.
Symbol
(di/dt)
(di/dt)
Symbol
Symbol
t
t
t
t
E
E
t
t
d(Voff)
d(Voff)
r(Voff)
r(Voff)
d(on)
d(on)
E
E
E
E
off
off
I
I
Q
Q
V
t
t
t
t
rrm
rrm
t
t
on
on
r
r
f
f
ts
ts
rr
rr
(1)
(1)
F
rr
rr
on
on
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Switching energy (inductive load)
Collector-emitter diode
Parameter
Parameter
Parameter
Doc ID 12819 Rev 8
V
R
Figure 22
V
R
T
Figure 22
V
R
Figure 22
V
R
TJ = 125 °C
Figure 22
V
R
Figure 22
V
R
T
Figure 22
I
I
I
di/dt = 100 A/µs
Figure 23
I
T
Figure 23
J
F
F
F
F
CC
CC
J
G
G
CC
CC
CC
CC
G
G
G
G
J
= 10 Ω , V
= 10 Ω , V
= 125 °C
= 12 A
= 12 A, T
= 12 A, V
= 12 A, V
= 125 °C
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
=125 °C, di/dt = 100 A/µs
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
Test conditions
Test conditions
Test conditions
GE
GE
GE
GE
GE
GE
J
R
R
= 125 °C
C
C
= 40 V,
= 40 V,
C
C
C
C
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 12 A
= 12 A
= 12 A
= 12 A
= 12 A
= 12 A
Electrical characteristics
Min.
Min.
Min.
-
-
-
-
-
-
-
-
-
1600
1400
Typ.
Typ.
Typ.
144
128
102
189
274
187
407
594
2.6
2.1
25
24
27
97
73
58
31
30
59
85
7
8
2
4
Max.
Max.
Max.
-
-
-
-
-
-
-
-
-
A/µs
A/µs
Unit
Unit
Unit
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
V
V
A
A
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