STGP19NC60HD STMicroelectronics, STGP19NC60HD Datasheet - Page 9

• Manufacturer Part Number: STGP19NC60HD
• Description: IGBT VERY FAST 600V 40A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP19NC60HD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 12A
• Current - Collector (ic) (max): 40A
• Power - Max: 130W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 130W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-8809-5; STGP19NC60HD

STGx19NC60HD, STGWA19NC60HD
3
Figure 20. Test circuit for inductive load
Figure 22. Switching waveform
V
CE
V
G
I
C
Test circuits
switching
Td(on)
Ton
Tr(Ion)
Td(off)
Toff
Tcross
Tr(Voff)
Tf
90%
10%
90%
10%
Doc ID 12819 Rev 8
AM01504v1
AM01506v1
90%
10%
Figure 21. Gate charge test circuit
Figure 23. Diode recovery time waveform
I
F
I
RRM
di/dt
t
a
dv/dt
t
rr
t
b
Test circuits
Q
I
V
RRM
F
rr
AM01505v1
AM01507v1
t
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