IXGA16N60C2D1 IXYS, IXGA16N60C2D1 Datasheet - Page 6

no-image

IXGA16N60C2D1

Manufacturer Part Number
IXGA16N60C2D1
Description
IGBT FAST C2 600V 40A TO-263
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet

Specifications of IXGA16N60C2D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 12A
Current - Collector (ic) (max)
40A
Power - Max
150W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
16
Vce(sat), Max, Tj=25°c, Igbt, (v)
3
Tfi, Typ, Tj=25°c, Igbt, (ns)
33
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.27
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
11
Rthjc, Max, Diode, (ºc/w)
2.5
Package Style
TO-263 (D2 PAK)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGA16N60C2D1
Manufacturer:
MICRONAS
Quantity:
1 300
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
180
160
140
120
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
80
60
40
20
0
0
20
12
25
E
T
V
Fig. 16. Inductive Turn-off Switching Times vs.
E
R
V
13
off
J
CE
off
CE
Fig. 12. Inductive Switching Energy Loss vs.
Fig. 14. Inductive Switching Energy Loss vs.
G
35
= 125ºC , V
= 22
30
= 400V
= 400V
14
Ω ,
45
V
40
15
GE
GE
E
E
on
= 15V
on
= 15V
55
T
Junction Temperature
- - - -
J
T
T
16
- - - -
- Degrees Centigrade
J
J
Collector Current
= 125ºC
= 25ºC
Gate Resistance
50
R
65
I
17
G
C
- Ohms
- Amperes
18
60
75
19
R
V
t
85
f i
CE
G
70
= 22
= 400V
20
95
, V
21
80
I
GE
C
105
t
= 15V
= 24A
d(off)
I
22
C
I
I
= 24A
C
C
90
- - - -
= 12A
= 12A
115
23
100
24
125
140
130
120
110
100
90
80
70
60
50
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
160
140
120
100
0.7
0.6
0.5
0.4
0.3
0.2
0.1
130
125
120
115
110
105
100
80
60
40
20
95
90
0
0
IXGA16N60C2D1
12
25
20
Fig. 15. Inductive Turn-off Switching Times vs.
E
R
V
T
Fig. 17. Inductive Turn-off Switching Times vs.
13
R
V
t
off
CE
J
G
f i
35
Fig. 13. Inductive Switching Energy Loss vs.
G
CE
= 125ºC
= 22
30
= 22
= 400V
= 400V
14
Ω ,
45
, V
V
T
40
15
GE
J
GE
= 25ºC
t
E
d(on)
55
= 15V
= 15V
I
on
Junction Temperature
C
I
T
16
C
J
- - - -
= 24A
Collector Current
- - - -
Gate Resistance
50
= 24A, 12A
- Degrees Centigrade
I
C
65
17
- Amperes
R
G
- Ohms
60
75
18
T
V
t
19
J
f i
CE
85
= 125ºC,
IXGH16N60C2D1
70
IXGP16N60C2D1
= 400V
20
95
I
C
80
V
= 12A
21
GE
t
105
d(off)
= 15V
22
90
- - - -
115
23
100
125
24
360
320
280
240
200
160
120
80
40
130
120
110
100
90
80
70
60
50
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0

Related parts for IXGA16N60C2D1