IXGA16N60C2D1 IXYS, IXGA16N60C2D1 Datasheet - Page 7

• Manufacturer Part Number: IXGA16N60C2D1
• Description: IGBT FAST C2 600V 40A TO-263
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGA16N60C2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 12A
• Current - Collector (ic) (max): 40A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 16
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 33
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.27
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): 11
• Rthjc, Max, Diode, (ºc/w): 2.5
• Package Style: TO-263 (D2 PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
55
50
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
0
25
20
Fig. 20. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
t
T
V
r i
J
CE
35
= 125ºC, V
30
= 400V
45
40
GE
t
55
d(on)
= 15V
Junction Temperature
T
I
I
J
C
C
- Degrees Centigrade
- - - -
Gate Resistance
50
= 12A
= 24A
65
R
G
- Ohms
75
60
I
C
R
V
t
85
= 24A
r i
G
CE
I
= 22
70
C
= 400V
= 12A
Ω
95
, V
80
GE
105
t
d(on)
= 15V
- - - -
90
115
125
100
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
15.5
15.0
55
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
12
IXGA16N60C2D1
Fig. 19. Inductive Turn-on Switching Times vs.
t
R
V
13
r i
G
CE
= 22
= 400V
14
Ω
, V
15
GE
t
T
d(on)
= 15V
J
= 25ºC, 125ºC
16
Collector Current
- - - -
17
I
C
18
- Amperes
19
IXGH16N60C2D1
IXGP16N60C2D1
20
21
22
IXYS REF: IXG_16N60C3D1(3D)7-29-10
23
24
19.0
18.5
18.0
17.5
17.0
16.5
16.0
15.5
15.0