STGW39NC60VD STMicroelectronics, STGW39NC60VD Datasheet - Page 10
![IGBT N-CHAN 600V 40A TO-247](/photos/5/30/53058/to-247_sml.jpg)
STGW39NC60VD
Manufacturer Part Number
STGW39NC60VD
Description
IGBT N-CHAN 600V 40A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet
1.STGW39NC60VD.pdf
(15 pages)
Specifications of STGW39NC60VD
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 30A
Current - Collector (ic) (max)
80A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.8 V/1.7 V
Maximum Gate Emitter Voltage
+/- 20 V
Gate-emitter Leakage Current
+/- 100 nA
Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
80 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
80A
Collector Emitter Voltage Vces
2.5V
Power Dissipation Pd
250W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-5741
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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STGW39NC60VD
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Quantity:
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Part Number:
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Manufacturer:
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Electrical characteristics
10/15
Equation 2
P
with 50% of duty cycle, V
●
Equation 3
P
conditions: V
included in the E
measurements (see note 3).
C
SW
= I
Power dissipation during ON & OFF commutations is due to the switching frequency:
= (E
C
* V
ON
CE(SAT)
+ E
CE
OFF
= 390 V, V
ON
* δ
) * freq.Typical values @ 125 °C for switching losses are used (test
(see note 2), while the tail of the collector current is included in the E
CESAT
GE
= 15 V, R
typical value @125 °C.
G
= 10 Ω). Furthermore, diode recovery energy is
STGW39NC60VD
OFF