STGW39NC60VD STMicroelectronics, STGW39NC60VD Datasheet - Page 12

IGBT N-CHAN 600V 40A TO-247

STGW39NC60VD

Manufacturer Part Number
STGW39NC60VD
Description
IGBT N-CHAN 600V 40A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STGW39NC60VD

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 30A
Current - Collector (ic) (max)
80A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.8 V/1.7 V
Maximum Gate Emitter Voltage
+/- 20 V
Gate-emitter Leakage Current
+/- 100 nA
Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
80 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
80A
Collector Emitter Voltage Vces
2.5V
Power Dissipation Pd
250W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-5741

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Package mechanical data
4
12/15
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at:
www.st.com
STGW39NC60VD

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