IXGT28N60B IXYS, IXGT28N60B Datasheet - Page 3
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IXGT28N60B
Manufacturer Part Number
IXGT28N60B
Description
IGBT 40A 600V TO-268
Manufacturer
IXYS
Datasheet
1.IXGH28N60B.pdf
(5 pages)
Specifications of IXGT28N60B
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 28A
Current - Collector (ic) (max)
40A
Power - Max
150W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
28
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2
Tfi, Typ, Tj=25°c, Igbt, (ns)
200
Eoff, Typ, Tj=125°c, Igbt, (mj)
6
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
© 2003 IXYS All rights reserved
4.5
3.5
2.5
1.5
60
50
40
30
20
10
60
50
40
30
20
10
0
5
4
3
2
1
0
0.5
0.5
6
Fig. 5. Collector-to-Em itter Voltage
7
Fig. 3. Output Characteristics
Fig. 1. Output Characte ristics
vs. Gate-to-Em itter voltage
1
8
1
9
I
1.5
C
@ 125 Deg. C
V
V
10
= 56A
@ 25 Deg. C
GE
V
1.5
C E
V
28A
14A
V
G E
CE
GE
= 15V
11
- Volts
13V
11V
- Volts
= 15V
9V
- Volts
2
13V
11V
12
9V
2
13
2.5
T
J
14
= 25ºC
2.5
7V
5V
15
3
7V
5V
16
3.5
17
3
240
200
160
120
90
80
70
60
50
40
30
20
10
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
80
40
0
0
4
Fig. 2. Extended Output Characte ristics
-50
0
V
V
2
Fig. 4. De pende nce of V
-25
GE
T
GE
Fig. 6. Input Adm ittance
J
= 125ºC
5
= 15V
= 15V
4
-40ºC
25ºC
0
T
J
6
- Degrees Centigrade
Tem perature
@ 25 de g. C
6
25
V
8
V
G E
C E
- Volts
10
50
- Volts
7
IXGH 28N60B
IXGT 28N60B
12 14
75
I
I
I
CE(sat)
C
C
C
13V
11V
= 14A
8
= 28A
100
= 56A
9V
7V
5V
16
on
125
18
9
150
20