IXGT28N60B IXYS, IXGT28N60B Datasheet - Page 5

• Manufacturer Part Number: IXGT28N60B
• Description: IGBT 40A 600V TO-268
• Manufacturer: IXYS

Specifications of IXGT28N60B

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 28A
• Current - Collector (ic) (max): 40A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): 28
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 200
• Eoff, Typ, Tj=125°c, Igbt, (mj): 6
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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10000
1000
500
450
400
350
300
250
200
150
100
10
0.1
0.5
1
25
0
1
Fig. 13. Dependence of Sw itching
t
t
R
V
V
d(off)
fi
35
GE
CE
G
f = 1 MHz
5
-
= 10Ω
= 480V
= 15V
- - - - -
45
Fig. 15. Capacitance
Tim e on Tem perature
I
T
10
C
J
= 28A
55
- Degrees Centigrade
15
V
65
I
C E
C
= 14A
75
20
- Volts
85
Fig. 16. Maxim um Transient Therm al Resistance
I
25
C
= 56A
I
C
95
= 56A
C
C
C
30
ies
oes
res
105 115 125
10
35
Pulse Width - milliseconds
40
15
12
9
6
3
0
0
V
I
I
C
G
CE
= 28A
= 1 0mA
10
= 300V
100
Fig. 14. Gate Charge
20
Q
G
- nanoCoulombs
30
40
IXGH 28N60B
IXGT 28N60B
50
60
1000
70