STGW35NB60SD STMicroelectronics, STGW35NB60SD Datasheet - Page 5

• Manufacturer Part Number: STGW35NB60SD
• Description: MOSFET N-CHAN 35A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW35NB60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 20A
• Current - Collector (ic) (max): 70A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 1.7V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

STGW35NB60SD
Table 7.
(1)Pulse width limited by max. junction temperature
(2) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the
(3) Turn-off losses include also the tail of the collector current
(4) Calculated according to the iterative formula:
I
C
Symbol
IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
T
C
I
I
Q
Q
rrm
rrm
V
t
t
t
t
S
S
rr
rr
a
a
=
rr
rr
f
------------------------------------------------------------------------------------------------- -
R
THJ C
–
Collector-emitter diode
Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
T
V
JMAX
CESAT MAX
–
T
Parameter
C
(
T
C
I
C
)
If = 10A
If = 10A, Tj = 125°C
If = 20A, V
T
(see Figure 19)
If = 20A, V
T
(see Figure 19)
j
j
= 25°C, di/dt = 100A/µs
= 125°C, di/dt = 100A/µs
Test Conditions
R
R
= 40V,
= 40V,
Min.
0.375
Typ.
0.57
237
1.3
5.4
2 Electrical characteristics
44
32
66
88
56
1
3
Max.
2
Unit
nC
nC
ns
ns
ns
ns
V
V
A
A
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