STGW35NB60SD STMicroelectronics, STGW35NB60SD Datasheet - Page 6

• Manufacturer Part Number: STGW35NB60SD
• Description: MOSFET N-CHAN 35A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW35NB60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 20A
• Current - Collector (ic) (max): 70A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 1.7V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

2 Electrical characteristics
2.1
6/13
Figure 1.
Figure 3.
Figure 5.
Electrical characteristics (curves)
Output Characteristics
Transconductance
Collector-Emitter on Voltage vs
Collector Current
Figure 2.
Figure 4.
Figure 6.
Transfer Characteristics
Normalized Collector-Emitter On
Voltage vs Temperature
Gate Threshold vs Temperature
STGW35NB60SD