IXGH100N30C3 IXYS, IXGH100N30C3 Datasheet - Page 5

IGBT HI SPEED 300V 100A TO-247

IXGH100N30C3

Manufacturer Part Number
IXGH100N30C3
Description
IGBT HI SPEED 300V 100A TO-247
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGH100N30C3

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
300V
Vce(on) (max) @ Vge, Ic
1.85V @ 15V, 100A
Current - Collector (ic) (max)
75A
Power - Max
460W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Channel Type
N
Configuration
Single
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Collector-emitter Voltage
300V
Operating Temperature (min)
-55C
Vces, (v)
300
Ic25, Tc=25°c, Igbt, (a)
500
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
100
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.85
Tfi, Typ, Tj=25°c, Igbt, (ns)
94
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.52
Rthjc, Max, Igbt, (°c/w)
0.27
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
© 2007 IXYS CORPORATION, All rights reserved
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
180
160
140
120
100
80
60
40
25
2
25
Energy Loss vs. Junction Temperature
Switching Times vs. Collector Current
E
R
V
35
t
R
V
E
T
V
30
off
G
CE
f
J
CE
off
CE
G
3
Energy Loss vs. Gate Resistance
= 125ºC , V
= 2 Ω
= 2 Ω , V
= 200V
= 200V
= 200V
Fig. 12. Inductive Switching
45
35
Fig. 14. Inductive Swiching
Fig. 16. Inductive Turn-off
,
4
T
t
V
d(off)
E
J
GE
40
55
GE
T
on
- Degrees Centigrade
E
J
GE
= 15V
on
= 15V
= 25ºC
- - - -
- - - -
5
I
- - - -
= 15V
45
65
C
R
- Amperes
G
- Ohms
50
75
6
55
85
7
T
J
I
I
= 125ºC
60
C
C
95
= 25A
= 50A
8
I
I
65
C
C
105
= 50A
= 25A
9
70
115
75
10
125
135
130
125
120
115
110
105
100
0.6
0.5
0.4
0.3
0.2
0.1
0.5
0.4
0.3
0.2
0.1
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
160
150
140
130
120
110
100
130
120
110
100
90
80
70
60
25
25
2
Switching Times vs. Junction Temperature
E
R
V
t
R
V
off
G
CE
Switching Times vs. Gate Resistance
30
f
t
T
V
CE
G
35
= 2
f
J
Energy Loss vs. Collector Current
CE
= 200V
= 2 Ω , V
3
= 125ºC,
= 200V
Ω ,
= 200V
35
I
45
Fig. 13. Inductive Swiching
C
Fig. 15. Inductive Turn-off
Fig. 17. Inductive Turn-off
= 50A, 25A
T
V
4
t
d(off)
GE
E
GE
J
40
55
t
on
V
d(off)
- Degrees Centigrade
= 15V
= 15V
GE
T
- - - -
J
- - - -
I
C
= 125ºC, 25ºC
= 15V
5
- - - -
45
65
- Amperes
R
G
I
C
- Ohms
75
50
= 25A
6
85
55
I
7
IXGH100N30C3
C
= 50A
95
60
8
105
65
115
9
70
125
10
75
135
130
125
120
115
110
105
100
360
320
280
240
200
160
120
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0

Related parts for IXGH100N30C3