IXGH100N30C3 IXYS, IXGH100N30C3 Datasheet - Page 6

• Manufacturer Part Number: IXGH100N30C3
• Description: IGBT HI SPEED 300V 100A TO-247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH100N30C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 100A
• Current - Collector (ic) (max): 75A
• Power - Max: 460W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Channel Type: N
• Configuration: Single
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector-emitter Voltage: 300V
• Operating Temperature (min): -55C
• Vces, (v): 300
• Ic25, Tc=25°c, Igbt, (a): 500
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 100
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.85
• Tfi, Typ, Tj=25°c, Igbt, (ns): 94
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.52
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
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2
Switching Times vs. Junction Temperature
I
C
t
R
V
t
T
V
Switching Times vs. Gate Resistance
= 50A
r
35
r
J
CE
CE
G
= 125ºC, V
3
= 2 Ω , V
= 200V
= 200V
45
Fig. 20. Inductive Turn-on
Fig. 18. Inductive Turn-on
I
4
C
t
d(on)
t
GE
I
d(on)
= 25A
I
55
T
GE
C
C
J
= 15V
= 25A
= 50A
- Degrees Centigrade
= 15V
- - - -
- - - -
R
5
65
G
- Ohms
75
6
85
7
95
8
105
9
115
10
125
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60
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50
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40
35
30
25
20
15
10
25
Switching Times vs. Collector Current
t
R
V
30
r
G
CE
= 2 Ω , V
= 200V
T
J
35
= 25ºC, 125ºC
Fig. 19. Inductive Turn-on
t
d(on)
GE
40
= 15V
- - - -
45
I
C
- Amperes
50
55
IXGH100N30C3
60
IXYS REF: G_100N30C3(75)8-17-07
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