IRGIB10B60KD1P International Rectifier, IRGIB10B60KD1P Datasheet
IRGIB10B60KD1P
Specifications of IRGIB10B60KD1P
Available stocks
Related parts for IRGIB10B60KD1P
IRGIB10B60KD1P Summary of contents
Page 1
... Junction-to-Case- Diode R θJC R Case-to-Sink, flat, greased surface θCS Junction-to-Ambient, typical socket mount R θJA Wt Weight www.irf.com IRGIB10B60KD1P G n-channel Parameter 300 (0.063 in. (1.6mm) from case) Parameter Min. ––– ––– ––– ––– ––– 94913 ...
Page 2
... IRGIB10B60KD1P Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient GE(th) J gfe Forward Transconductance I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
Page 3
... T C (°C) Fig Maximum DC Collector Current vs. Case Temperature 100 10 1 0.1 0. 100 V CE (V) Fig Forward SOA T = 25°C; T 175°C ≤ www.irf.com IRGIB10B60KD1P Fig Power Dissipation vs. Case 100 10 µs 100 µs 10 1ms DC 1 1000 10000 ...
Page 4
... IRGIB10B60KD1P 18V 18 VGE = 15V 16 VGE = 12V VGE = 10V 14 VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = -40° 80µ 18V VGE = 15V 16 VGE = 12V 14 VGE = 10V VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = 150° 80µ 18V 18 VGE = 15V VGE = 12V 16 VGE = 10V 14 VGE = 8 ...
Page 5
... 5. 10A 20A (V) Fig Typical -40° 5. 10A 20A (V) Fig Typical 150°C J www.irf.com IRGIB10B60KD1P Fig Typical V vs 100 150° Fig Typ. Transfer Characteristics vs 5. 10A 20A (V) vs 25° 25° 150° 25° ( 50V 10µ ...
Page 6
... IRGIB10B60KD1P 700 600 E OFF 500 400 300 200 100 (A) Fig Typ. Energy Loss vs 150°C; L=1.07mH 50Ω 15V G GE 1000 E OFF 800 600 400 200 0 0 100 200 Ω ) Fig Typ. Energy Loss vs 150°C; L=1.07mH 10A 15V 1000 td OFF 100 ...
Page 7
... 470 Ω (A) Fig Typical Diode 150° 200 di F /dt (A/µs) Fig. 19- Typical Diode 400V 15V 10A 150° www.irf.com IRGIB10B60KD1P Fig Typical Diode I vs 1000 800 600 400 200 0 0 400 600 Fig Typical Diode Q vs 400V 100 200 300 400 Ω ...
Page 8
... IRGIB10B60KD1P 200 160 120 80 40 1000 100 (V) Fig. 22- Typ. Capacitance vs 0V 1MHz GE 8 470 Ω 270 Ω 150 Ω 50 Ω (A) Fig Typical Diode E vs 150° Cies Coes 4 2 Cres 0 0 100 Fig Typical Gate Charge vs 300V 400V Total Gate Charge (nC) ...
Page 9
... Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 1 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com IRGIB10B60KD1P τ J τ J τ τ τ 1 τ τ ...
Page 10
... IRGIB10B60KD1P DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Driver DUT Fig.C.T.3 - S.C.SOA Circuit 10 L VCC diode clamp / 360V DUT Rg Fig.C.T.5 - Resistive Load Circuit L DUT 480V Rg Fig.C.T.2 - RBSOA Circuit DUT DUT / DRIVER Rg Fig.C.T.4 - Switching Loss Circuit VCC www.irf.com VCC ...
Page 11
... RR -100 -200 -300 Peak I RR -400 -500 -600 0.20 0.30 0.40 Time (uS) Fig. WF3- Typ. Diode Recovery Waveform @ T = 150°C using Fig. CT.4 J www.irf.com IRGIB10B60KD1P 15 600 12.5 500 10 400 7.5 300 5 200 2.5 100 0 0 -2.5 -100 -5 0.05 1 1.2 Fig. WF2- Typ. Turn-on Loss Waveform ...
Page 12
... IRGIB10B60KD1P TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information "K " Note: "P" in assembly line position indicates "Lead-Free" TO-220 Full-Pak package is not recommended for Surface Mount Application IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...
Page 13
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...