IRGIB10B60KD1P International Rectifier, IRGIB10B60KD1P Datasheet - Page 4

• Manufacturer Part Number: IRGIB10B60KD1P
• Description: IGBT W/DIODE 600V 16A TO220FP
• Manufacturer: International Rectifier

Specifications of IRGIB10B60KD1P

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 10A
• Current - Collector (ic) (max): 16A
• Power - Max: 44W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 44W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• Rise Time: 34ns
• Termination Type: SMD
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Collector Emitter Saturation Voltage Vce(sat): 2.1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGIB10B60KD1P

IRGIB10B60KD1P
4
Fig. 7 - Typ. IGBT Output Characteristics
20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
Fig. 5 - Typ. IGBT Output Characteristics
8
6
4
2
0
0
0
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
T
J
T
= 150°C; tp = 80µs
J
= -40°C; tp = 80µs
2
2
V CE (V)
V CE (V)
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
4
4
6
6
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
20
18
16
14
12
10
40
35
30
25
20
15
10
8
6
4
2
0
5
0
0.0
0
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
T
0.5
J
= 25°C; tp = 80µs
tp = 80µs
-40°C
25°C
150°C
1.0
2
V CE (V)
V F (V)
1.5
2.0
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4
2.5
3.0
6