IRGIB10B60KD1P International Rectifier, IRGIB10B60KD1P Datasheet - Page 9

• Manufacturer Part Number: IRGIB10B60KD1P
• Description: IGBT W/DIODE 600V 16A TO220FP
• Manufacturer: International Rectifier

Specifications of IRGIB10B60KD1P

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 10A
• Current - Collector (ic) (max): 16A
• Power - Max: 44W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 44W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• Rise Time: 34ns
• Termination Type: SMD
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Collector Emitter Saturation Voltage Vce(sat): 2.1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGIB10B60KD1P

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0.001
0.01
0.01
0.1
0.1
10
10
1
1
1E-006
1E-006
D = 0.50
D = 0.50
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
0.10
0.05
0.20
0.10
0.05
0.02
0.01
0.02
0.01
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
0.20
1E-005
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
0.0001
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
0.001
0.001
τ
τ
J
J
τ
τ
J
τ
J
τ
1
1
Ci= τi/Ri
Ci= τi/Ri
τ
τ
1
Ci
1
Ci
0.01
0.01
i/Ri
i/Ri
R
R
1
R
1
R
1
1
τ
τ
IRGIB10B60KD1P
2
2
R
τ
R
τ
2
2
2
2
R
R
0.1
2
0.1
2
R
τ
R
τ
3
3
3
R
3
τ
R
τ
3
3
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
τ
R
4
R
4
τ
τ
4
R
4
4
R
4
1
1
4
4
τ
τ
C
C
τ
τ
Ri (°C/W)
Ri (°C/W)
0.3628
0.2582
1.1008
1.6973
0.9004
1.3642
1.4540
1.5805
10
10
1.6699
0.00018
0.000695
0.075305
1.781
0.000103
0.000693
0.033978
τi (sec)
τi (sec)
9
100
100