IRGIB10B60KD1P International Rectifier, IRGIB10B60KD1P Datasheet - Page 2

• Manufacturer Part Number: IRGIB10B60KD1P
• Description: IGBT W/DIODE 600V 16A TO220FP
• Manufacturer: International Rectifier

Specifications of IRGIB10B60KD1P

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 10A
• Current - Collector (ic) (max): 16A
• Power - Max: 44W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 44W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• Rise Time: 34ns
• Termination Type: SMD
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Collector Emitter Saturation Voltage Vce(sat): 2.1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGIB10B60KD1P

IRGIB10B60KD1P
 Vcc =80% (V
V
∆V
V
V
∆V
gfe
I
V
I
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
L
C
C
C
RBSOA
SCSOA
I
E
t
I
Q
Electrical Characteristics @ T
Switching Characteristics @ T
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
SC (PEAK)
rr
rr
E
(BR)CES
CE(on)
GE(th)
FM
on
off
tot
on
off
tot
rec
g
ge
gc
ies
oes
res
rr
(BR)CES
2
GE(th)
/∆T
/∆T
J
J
CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Peak Short Circuit Collector Current
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Diode Reverse Recovery Charge
), V
GE
= 15V, L =100µH, R
Parameter
Parameter
J
G
J
= 25°C (unless otherwise specified)
= 50Ω.
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
1.50
600
3.5
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
0.99
1.70
2.05
2.06
1.80
1.32
1.23
150
156
165
321
180
261
313
574
240
610
100
553
-10
4.5
5.0
1.0
4.6
7.5
90
41
19
25
24
62
22
24
48
66
23
99
79
14
—
—
—
‚ Energy losses include "tail" and diode reverse recovery.
2.10
2.35
2.35
2.40
1.74
1.62
±100
150
250
400
264
273
434
250
372
425
694
340
915
128
103
719
5.5
6.9
62
29
33
34
87
31
34
67
99
35
18
—
—
—
—
—
—
—
mV/°C V
V/°C V
nC di/dt = 500A/µs
µA
nA
nC V
nH Measured 5 mm from package
pF
µJ
ns
µJ
ns
µs
µJ
ns
V
V
V
S
V
A
A
V
I
I
I
V
V
V
V
V
I
I
I
V
I
V
I
V
Ls= 150nH, T
I
V
Ls= 150nH, T
I
V
Ls= 150nH, T
I
V
Ls= 150nH, T
V
V
f = 1.0MHz
T
V
T
V
T
V
V
C
C
C
F
F
F
C
C
C
C
C
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
GE
GE
GE
GE
GE
CC
CC
CC
CC
GE
= 5.0A, V
= 5.0A, V
= 5.0A, V
= 10A, V
= 10A, V
= 10A, V
= 10A
= 10A, V
= 10A, V
= 10A, V
= 8.0A, V
= 150°C, I
= 150°C, Vp = 600V, R
= 150°C
=500V,V
=360V,V
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V, V
= 400V
= 15V, R
= 15V, R
= 15V, R
= 15V, R
= 0V
= 30V
= 400V, I
= 15V, R
Conditions
= 15V
GE
GE
, I
, I
C
C
GE
GE
GE
CC
CC
CC
GE
GE
GE
CC
C
C
CE
CE
CE
C
GE
GE
= 500µA
= 1mA (25°C-150°C)
C
Conditions
G
G
G
G
G
= 250µA
= 1mA (25°C-150°C)
F
J
= 15V, T
= 15V, T
= 15V, T
= 10A, PW = 80µs
= 400V
= 400V
= 400V
J
J
J
= 0V
= 0V, T
= 0V, T
CE
= 600V
= 600V, T
= 600V, T
= 400V
= 32A, Vp = 600V
= 50Ω, L = 1.07mH
= 50Ω, L = 1.1mH
= 50Ω, L = 1.07mH
= 150°C
= 50Ω, L = 1.07mH
= 10A, L = 1.07mH
= 50Ω
= +15V to 0V,R
= +15V to 0V
= 25°C
= 25°C
= 150°C
= 0V
J
J
J
J
J
www.irf.com
= 150°C
= 175°C
= 25°C
= 150°C
= 175°C
J
J
= 150°C
= 175°C
G
= 50Ω
G
= 50Ω