IXGH120N30C3 IXYS, IXGH120N30C3 Datasheet - Page 3

• Manufacturer Part Number: IXGH120N30C3
• Description: IGBT 300V 120A TO-247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH120N30C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 120A
• Current - Collector (ic) (max): 75A
• Power - Max: 540W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 300
• Ic25, Tc=25°c, Igbt, (a): 600
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 120
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.1
• Tfi, Typ, Tj=25°c, Igbt, (ns): 86
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.73
• Rthjc, Max, Igbt, (°c/w): 0.23
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247 AD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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240
220
200
180
160
140
120
100
240
220
200
180
160
140
120
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
80
60
40
20
80
60
40
20
0
0
0
5
0
0.2
6
0.4
Fig. 5. Collector-to-Emitter Voltage
0.4
7
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
0.6
0.8
I
C
8
0.8
= 240A
120A
60A
V
V
9
GE
CE
1.2
V
1
@ 125ºC
@ 25ºC
CE
- Volts
- Volts
1.2
10
- Volts
1.6
V
1.4
GE
11
V
= 15V
1.6
GE
13V
11V
12
2
= 15V
1.8
13V
11V
T
J
13
= 25ºC
2
2.4
14
9V
7V
5V
2.2
9V
7V
5V
2.4
2.8
15
160
140
120
100
300
250
200
150
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
80
60
40
20
50
0
0
-50
0
3
V
GE
V
Fig. 2. Extended Output Characteristics
GE
1
= 15V
3.5
-25
11V
= 15V
Fig. 4. Dependence of V
2
4
0
9V
Fig. 6. Input Admittance
7V
5V
Junction Temperature
T
3
J
- Degrees Centigrade
4.5
25
V
V
4
CE
GE
@ 25ºC
- Volts
T
- Volts
J
I
I
I
50
5
5
C
C
C
= 125ºC
= 240A
= 120A
= 60A
- 40ºC
IXGH120N30C3
25ºC
6
5.5
75
CE(sat)
7
100
6
8
on
125
6.5
9
10
150
7