IXGH120N30C3 IXYS, IXGH120N30C3 Datasheet - Page 4

• Manufacturer Part Number: IXGH120N30C3
• Description: IGBT 300V 120A TO-247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH120N30C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 120A
• Current - Collector (ic) (max): 75A
• Power - Max: 540W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 300
• Ic25, Tc=25°c, Igbt, (a): 600
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 120
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.1
• Tfi, Typ, Tj=25°c, Igbt, (ns): 86
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.73
• Rthjc, Max, Igbt, (°c/w): 0.23
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247 AD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
1.00
0.10
0.01
140
120
100
100
80
60
40
20
0.00001
0
0
0
T
J
= - 40ºC
125ºC
f = 1 MHz
25ºC
20
5
Fig. 7. Transconductance
40
10
Fig. 9. Capacitance
0.0001
60
15
I
C
V
CE
- Amperes
80
20
- Volts
100
25
Fig. 11. Maximum Transient Thermal Impedance
0.001
C ies
C oes
C res
120
30
140
35
Pulse Width - Seconds
160
40
0.01
16
14
12
10
280
240
200
160
120
8
6
4
2
0
80
40
0
0
50
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
C
G
CE
T
R
dV / dT < 10V / ns
= 120A
= 10 mA
J
G
= 150V
= 125ºC
= 2 Ω
40
100
0.1
Fig. 8. Gate Charge
80
Q
150
G
- NanoCoulombs
V
CE
- Volts
120
200
IXGH120N30C3
1
160
250
200
300
10
240
350