IXDA20N120AS IXYS, IXDA20N120AS Datasheet - Page 2

• Manufacturer Part Number: IXDA20N120AS
• Description: IGBT 1200V 34A TO-263AB
• Manufacturer: IXYS

Specifications of IXDA20N120AS

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 20A
• Current - Collector (ic) (max): 34A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 38A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 38
• Ic90, Tc=90°c, Igbt, (a): 25
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3
• Tfi, Typ, Igbt, (ns): 70
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.4
• Rthjc, Max, Igbt, (°c/w): 0.63
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-263 (D2 PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Component
Symbol
T
T
Symbol
Weight
VJ
stg
1
E
2
2x e
3
Conditions
Conditions
W
A1
c2
c
A
3x b2
min.
E1
Characteristic Values
4
Maximum Ratings
typ.
Supplier
-55...+150
-55...+125
Option
2
3x b
max.
°C
°C
g
All dimensions conform with and/or are within
JEDEC standard.
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
H
L
L1
L2
W
14.61
4.06
0.51
1.14
0.40
1.14
8.38
8.00
9.65
6.22
1.78
1.02
1.02
0.02
min
typ.
IXDA 20N120AS
Millimeter
2,54 BSC
typ. 0.10
10.41
15.88
0.040
max
4.83
0.99
1.40
0.74
1.40
9.40
8.89
8.20
2.79
1.68
1.52
0.0008
0.160
0.020
0.045
0.016
0.045
0.330
0.315
0.380
0.245
0.575
0.070
0.040
0.040
min
typ.
0,100 BSC
typ. 0.004
Inches
0.0016
0.190
0.039
0.055
0.029
0.029
0.370
0.350
0.410
0.323
0.625
0.110
0.066
0.060
20110118a
max
2 - 5