IXDA20N120AS IXYS, IXDA20N120AS Datasheet - Page 3

• Manufacturer Part Number: IXDA20N120AS
• Description: IGBT 1200V 34A TO-263AB
• Manufacturer: IXYS

Specifications of IXDA20N120AS

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 20A
• Current - Collector (ic) (max): 34A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 38A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 38
• Ic90, Tc=90°c, Igbt, (a): 25
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3
• Tfi, Typ, Igbt, (ns): 70
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.4
• Rthjc, Max, Igbt, (°c/w): 0.63
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-263 (D2 PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
[A]
V
[A]
[V]
I
I
C
C
GE
40
35
30
25
20
15
10
35
30
25
20
15
10
20
15
10
5
0
5
0
5
0
0.0
5
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. turn on gate charge
T
V
I
C
V
J
T
CE
CE
= 25°C
J
10
= 600 V
= 25 A
= 25°C
0.5
= 20 V
6
20
1.0
7
30
1.5
V
8
Q
40
V
CE
G
GE
[nC]
[V]
[V]
50
2.0
9
60
2.5
10
70
V
GE
3.0
11
= 17V
15V
9V
80
13V
11V
3.5
12
90
[A]
I
C
40
35
30
25
20
15
10
5
0
0.0
Fig. 2 Typ. output characteristics
T
J
= 125°C
0.5
1.0
IXDA 20N120AS
1.5
V
CE
2.0
[V]
2.5
V
3.0
GE
=17V
3.5
20110118a
15V
11V
13V
9V
3 - 5
4.0