IXGT60N60B2 IXYS, IXGT60N60B2 Datasheet
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Manufacturer Part Number
IXGT60N60B2
Description
IGBT 600V 75A TO-268
Specifications of IXGT60N60B2
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 50A
Current - Collector (ic) (max)
75A
Power - Max
500W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
60
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
100
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.8
Rthjc, Max, Igbt, (°c/w)
0.25
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFAST
Optimized for 10-25 kHz hard
switching and up to 100 KHz
resonant switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
V
I
I
V
C25
C110
CM
GES
CES
GEM
C
J
JM
stg
GE(th)
CE(sat)
CES
CGR
GES
d
© 2003 IXYS All rights reserved
I
C
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ ≤ 600 V
T
Mounting torque (M3)
TO-247 AD
TO-268 SMD
Test Conditions
V
V
V
I
Note 1.
C
C
C
C
C
J
J
GE
CE
GE
CE
= 250 µA, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (limited by leads)
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= V
= 0 V
= 0 V, V
= 50 A, V
CES
TM
VJ
GE
CE
GE
= 125°C, R
= ±20 V
= V
= 15 V
IGBT
GE
GE
= 1 MΩ
G
= 10 Ω
T
T
T
(T
J
J
J
= 25°C
= 150°C
= 25°C
J
= 25°C, unless otherwise specified)
Advance Technical Data
IXGH 60N60B2
IXGT 60N60B2
min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
I
CM
1.13/10 Nm/lb.in.
= 150
300
600
600
±20
±30
500
150
300
75
60
max.
±100
5.0
6
4
1.8
50
1
V
mA
nA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
g
g
V
TO-268
TO-247 AD
G = Gate,
E = Emitter,
Features
Applications
(IXGT)
(IXGH)
Medium frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
V
I
V
t
C25
fi typ
CE(sat)
CES
G
C
G
E
C = Collector,
TAB = Collector
= 600 V
=
<
= 100 ns
E
DS99113(11/03)
1.8 V
75 A
C (TAB)
C (TAB)
Related parts for IXGT60N60B2
IXGT60N60B2 Summary of contents
... CES CE CES ±20 V GES CE(sat Note 1. © 2003 IXYS All rights reserved Advance Technical Data IXGH 60N60B2 IXGT 60N60B2 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 300 = 10 Ω 150 G CM 500 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... Notes: 1. Pulse test, t < 300µs wide, duty cycle < 2%. Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25° ...
... CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 3.7 3.4 3 100A C 2.8 50A 25A 2.5 2.2 1.9 1.6 1 Volts G E © 2003 IXYS All rights reserved 350 9V 300 250 7V 200 150 100 2.5 3 1.4 9V 1.3 1.2 7V 1.1 1.0 0.9 0.8 0 ...
Fig. 7. Transconductance 100 -40º 25ºC 70 125º 100 150 I - Amperes C Fig. 9. Depe nde nce of Turn-Off Ene rgy ...
... MHz 1000 100 Volts C E 0.275 0.25 0.225 0.2 0.175 0.15 0.125 0.1 0.075 0.05 1 © 2003 IXYS All rights reserved 50A 3 25A 0 95 105 115 125 C ies C oes C res Fig. 16. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXGH 60N60B2 IXGT 60N60B2 Fig ...
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