IXGT60N60B2 IXYS, IXGT60N60B2 Datasheet - Page 4

• Manufacturer Part Number: IXGT60N60B2
• Description: IGBT 600V 75A TO-268
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGT60N60B2

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Power - Max: 500W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 60
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 100
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.8
• Rthjc, Max, Igbt, (°c/w): 0.25
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1200
1100
1000
900
800
700
600
500
400
300
200
100
90
80
70
60
50
40
30
20
10
0
7
6
5
4
3
2
1
0
20
0
0
T
t
t
T
V
V
J
R
V
V
d(off)
fi
J
Fig. 11. De pendence of Turn-Off
GE
CE
5
= -40ºC
GE
CE
G
Fig. 9. Depe nde nce of Turn-Off
30
= 125ºC
125ºC
-
Fig. 7. Transconductance
= 400V
25ºC
= 3.3Ω
= 15V
50
= 400V
- - - - -
= 15V
10
Sw itching Tim e on R
40
T
I
15
J
C
100
= 125ºC
= 100A
Ene rgy on I
I
R
50
I
C
20
C
- Amperes
G
- Amperes
- Ohms
150
25
60
T
J
I
C
= 25ºC
30
= 50A
70
c
200
35
80
G
40
I
250
C
= 25A
90
45
300
100
50
400
350
300
250
200
150
100
10
50
9
8
7
6
5
4
3
2
1
7
6
5
4
3
2
1
0
20
25
0
T
V
V
Fig. 12. De pendence of Turn-Off
Fig. 10. Dependence of Turn-Off
35
J
5
Fig. 8. De pendence of Turn-Off
GE
CE
30
R
V
V
= 125ºC
GE
CE
G
= 400V
= 15V
Energy on Tem perature
10
= 3.3Ω
45
= 400V
= 15V
Sw itching Tim e on I
T
T
T
J
40
J
J
= 25ºC
15
= 125ºC
55
- Degrees Centigrade
Energy on R
I
50
R
C
20
65
- Amperes
G
- Ohms
IXGH 60N60B2
IXGT 60N60B2
60
25
75
I
I
30
C
85
C
I
70
C
= 100A
G
= 50A
= 25A
I
C
I
35
95
= 100A
C
c
t
t
R
V
V
= 50A
80
I
d(off)
fi
C
GE
CE
G
= 25A
105 115 125
40
- - - - - -
= 3.3Ω
= 400V
= 15V
90
45
100
50