IXGK50N90B2D1 IXYS, IXGK50N90B2D1 Datasheet
IXGK50N90B2D1
Specifications of IXGK50N90B2D1
Related parts for IXGK50N90B2D1
IXGK50N90B2D1 Summary of contents
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... CES CE CES ± GES Note 1 CE(sat) C110 C GE © 2006 IXYS All rights reserved IXGH 50N90B2D1 IXGK 50N90B2D1 IXGX 50N90B2D1 Maximum Ratings 900 = 1 MΩ 900 GE ± 20 ± 200 = 10 Ω 100 G CM ≤ 600V 400 -55 ... +150 150 -55 ... +150 300 1.13/10Nm/lb.in. 20..120 / 4.5..25 ...
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... R with heat transfer paste thCH Pulse test, t ≤ 300 μs, duty cycle ≤ Note 1: IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or more of the following U.S. patents: 4,850,072 4,881,106 IXGH 50N90B2D1 IXGK 50N90B2D1 = I ...
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... Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 6.5 6.0 5 100A C 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1 Volts G E © 2006 IXYS All rights reserved IXGH 50N90B2D1 IXGK 50N90B2D1 º C 300 250 9V 200 150 7V 100 5V 2.5 3 3.5 4 4.5 C 1.3 1.2 9V 1.1 1.0 7V 0.9 ...
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... J 100A V = 15V 900 720V 800 CE 700 600 500 400 300 200 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXGH 50N90B2D1 IXGK 50N90B2D1 125 150 175 200 225 C º 125 C J º 100 G 600 550 500 ...
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... T - Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts 0.1 0.01 0.1 © 2006 IXYS All rights reserved IXGH 50N90B2D1 IXGK 50N90B2D1 15 13.5 12 10.5 9 7 100A 3 C 50A 1.5 25A 105 115 125 110 100 ies oes ...
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... T VJ Fig. 21. Dynamic parameters versus K/W Z thJC 0.1 0.01 0.001 0.00001 0.0001 0.001 Fig. 24 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXGH 50N90B2D1 IXGK 50N90B2D1 100°C μ 600V 60A 30A 15A ...
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... IXYS reserves the right to change limits, test conditions, and dimensions without notice. © 2006 IXYS All rights reserved ...