IXGK50N90B2D1 IXYS, IXGK50N90B2D1 Datasheet - Page 3

• Manufacturer Part Number: IXGK50N90B2D1
• Description: IGBT 900V FRD TO-264
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGK50N90B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Power - Max: 400W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vces, (v): 900
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 200
• Eoff, Typ, Tj=125°c, Igbt, (mj): 8.7
• Rthjc, Max, Igbt, (°c/w): 0.31
• If, Tj=110°c, Diode, (a): 15
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS All rights reserved
100
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
0
0
0
0
5
Fig. 5. Collector-to-Em itter Voltage
0.5
0.5
Fig. 3. Output Characteristics
6
Fig. 1. Output Characteristics
vs. Gate-to-Em itter voltage
7
1
1
8
1.5
1.5
V
V
@ 125
V
C E
V
V
GE
@ 25
GE
9
CE
G E
2
2
- Volts
I
= 15V
C
=15V
- Volts
13V
11V
10
- Volts
13V
11V
= 100A
º
2.5
º
2.5
C
C
50A
25A
11
3
3
12
3.5
T
9V
3.5
7V
J
5V
9V
7V
5V
13
= 25
4
14
4
º
C
4.5
4.5
15
IXGH 50N90B2D1 IXGK 50N90B2D1
1.3
1.2
1.1
1.0
0.9
0.8
0.7
300
250
200
150
100
250
225
200
175
150
125
100
50
75
50
25
-50
Fig. 2. Extended Output Characteristics
0
0
0
3
V
Fig. 4. Dependence of V
-25
GE
Fig. 6. Input Adm ittance
4
= 15V
V
3
GE
0
T
5
J
= 15V
- Degrees Centigrade
Tem perature
25
6
@ 25
V
V
6
G E
C E
IXGX 50N90B2D1
7
50
º
- Volts
- Volts
C
T
J
8
= -40
1 3V
75
9
I
125
C
11V
9V
7V
5V
25
I
CE(sat)
= 100A
C
I
º
º
9
º
C
C
C
C
= 50A
100
= 25A
10
12
on
125
11
150
15
12