STGW30NC60VD STMicroelectronics, STGW30NC60VD Datasheet - Page 4

IGBT N-CH FAST 80A 600V TO-247

STGW30NC60VD

Manufacturer Part Number
STGW30NC60VD
Description
IGBT N-CH FAST 80A 600V TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Type
Very Fastr
Datasheets

Specifications of STGW30NC60VD

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 20A
Current - Collector (ic) (max)
80A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Capacitance, Gate
2200 pF
Current, Collector
80 A
Energy Rating
550 μJ
Package Type
TO-247
Polarity
N-Channel
Power Dissipation
250 W
Resistance, Thermal, Junction To Case
0.48 °C/W
Speed, Switching
50 kHz
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
1.8 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
497-5969-5

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Manufacturer
Quantity
Price
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Manufacturer:
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Quantity:
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Manufacturer:
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0
Electrical characteristics
2
4/13
Electrical characteristics
T
Table 4.
Table 5.
Table 6.
V
J
Symbol
Symbol
(di/dt)
Symbol
(di/dt)
V
V
(BR)CES
= 25 °C unless otherwise specified.
t
t
C
CE(sat)
I
C
I
C
GE(th)
Q
Q
d(on)
d(on)
CES
GES
Q
g
oes
t
t
res
ies
ge
fs
gc
r
r
g
onf
on
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Collector-emitter breakdown
voltage (V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector-cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance
Switching on/off (inductive load)
Static
Dynamic
GE
= 0)
Parameter
Parameter
CE
GE
Parameter
= 0)
= 0)
Doc ID 13241 Rev 5
V
V
V
(see Figure 18)
I
V
V
V
V
V
V
V
V
V
C
GE
CE
CE
GE
GE
GE
GE
CE
CE
CE
GE
CE
= 1 mA
V
R
(see Figure 17)
V
R
T
= V
= 600 V, T
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 600 V
= 25V, f = 1 MHz, V
= 390V, I
= 15V,
= ± 20V
= 15 V
j
CC
CC
G
G
=125°C
=3.3 Ω, V
=3.3 Ω, V
Test conditions
Test conditions
GE
=390 V, I
=390 V, I
Test conditions
, I
,
C
I
C
C
C
C
C
= 250 µA
C
(see Figure 17)
=20 A
=40 A
=80 A,T
=20 A,T
= 20 A
j
= 125 °C
= 20A,
GE
GE
C
C
= 20 A,
= 20 A,
=15V
=15 V
j
j
=100 °C
=125 °C
GE
= 0
Min.
-
-
Min.
Min.
3.75
600
-
-
1600
1500
Typ.
11.5
STGW30NC60VD
31
11
31
2200
Typ. Max. Unit
Typ.
225
100
1.8
2.1
2.9
1.7
50
16
45
15
Max.
Max. Unit
±100
5.75
140
-
-
2.5
10
1
-
Unit
A/µs
A/µs
mA
ns
ns
ns
ns
µA
nA
nC
nC
nC
pF
pF
pF
V
V
V
S

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