STGW30NC60VD STMicroelectronics, STGW30NC60VD Datasheet - Page 5

• Manufacturer Part Number: STGW30NC60VD
• Description: IGBT N-CH FAST 80A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r
• Type: Very Fastr

Specifications of STGW30NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 80A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Capacitance, Gate: 2200 pF
• Current, Collector: 80 A
• Energy Rating: 550 μJ
• Package Type: TO-247
• Polarity: N-Channel
• Power Dissipation: 250 W
• Resistance, Thermal, Junction To Case: 0.48 °C/W
• Speed, Switching: 50 kHz
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 1.8 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 497-5969-5

STGW30NC60VD
Table 6.
Table 7.
1. Eon is the turn-on losses when a typical diode is used in the test circuit in
Table 8.
Symbol
Symbol
t
t
E
E
t
t
r(Voff)
r(Voff)
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
d(off)
d(off)
E
E
on
on
E
E
I
I
Q
Q
V
t
t
rrm
rrm
t
t
f
f
off
off
rr
rr
ts
ts
F
rr
rr
(1)
(1)
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching energy (inductive load)
Switching on/off (inductive load)
Collector-emitter diode
Parameter
Parameter
Doc ID 13241 Rev 5
I
I
I
T
(see Figure 20)
I
T
di/dt =100 A/µs
(see Figure 20)
V
R
(see Figure 19)
V
R
Tj= 125°C
(see Figure 19)
V
R
(see Figure 17)
V
R
T
F
F
F
F
j
j
CC
CC
j
G
G
CC
CC
G
G
=125°C
= 20 A
= 20 A, T
= 20 A, V
= 25°C, di/dt =100 A/µs
= 2 0A, V
= 125°C,
=3.3 Ω, V
=3.3 Ω, V
=3.3 Ω, V
=3.3 Ω, V
=390 V, I
=390 V, I
=390 V, I
=390 V, I
Test conditions
Test conditions
(see Figure 17)
j
R
R
= 125°C
GE
GE
GE
GE
C
C
C
C
= 40 V,
= 40 V,
= 20 A,
= 20 A,
= 20 A,
= 20 A,
=15 V,
=15 V,
=15 V
=15 V
Figure
Electrical characteristics
Min.
Min.
-
-
-
-
-
-
-
19. Eon include diode
Typ.
1220
Typ.
237
220
330
550
450
770
1.8
1.4
5.4
100
150
130
44
66
88
28
75
66
3
Max.
Max.
300
450
750
2.3
-
-
-
-
-
Unit
Unit
nC
nC
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
ns
ns
ns
ns
ns
ns
V
V
A
A
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