IXGQ35N120BD1 IXYS, IXGQ35N120BD1 Datasheet
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Manufacturer Part Number
IXGQ35N120BD1
Description
IGBT 1200V 75A FRD TO-3P
Specifications of IXGQ35N120BD1
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.3V @ 15V, 35A
Current - Collector (ic) (max)
75A
Power - Max
400W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-3P
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-3P
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
High Voltage IGBT
with Diode
Symbol
V
I
I
V
© 2004 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Weight
GES
CES
CM
C25
C110
F110
GE(th)
CE(sat)
JM
GEM
J
stg
CES
CGR
GES
C
d
Test Conditions
I
V
V
V
I
Note 2
Test Conditions
T
T
Continuous
Transient
T
T
T
T
V
Clamped inductive load
T
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
C
C
CE
GE
CE
C
C
C
C
C
J
J
GE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 µA, V
= V
= 0 V
= 0 V, V
= 35A, V
CES
GE
J
GE
= 125°C, R
= ±20 V
= 15 V
CE
= V
GE
GE
G
= 1 MΩ
= 10 Ω
Advanced Technical Information
T=25°C
T=125°C
(T
J
= 25°C, unless otherwise specified)
IXGQ 35N120BD1
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@0.8 V
Maximum Ratings
I
CM
typ.
1.13/10 Nm/lb.in.
2.7
= 120
1200
1200
±20
±30
200
400
150
300
75
35
CES
max.
8
6
±100
250
5.0
3.3
50
µA
µA
nA
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
A
g
V
I
V
t
TO-3P (IXGQ)
G = Gate
E = Emitter
Features
Advantages
C25
fi(typ)
International standard packages
IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
MOS Gate turn-on
- drive simplicity
Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
Saves space (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
CES
CE(sat)
G
C
E
= 1200 V
=
= 160 ns
= 3.3 V
C = Collector
TAB = Collector
75 A
DS99195(07/04)
RM
(TAB)
Related parts for IXGQ35N120BD1
IXGQ35N120BD1 Summary of contents
... CES CE CES ±20 V GES 35A CE(sat Note 2 © 2004 IXYS All rights reserved Advanced Technical Information IXGQ 35N120BD1 Maximum Ratings 1200 = 1 MΩ 1200 GE ±20 ± 200 = 10 Ω 120 G CM @0.8 V CES 400 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 300 Characteristic Values (T = 25° ...
... Notes: 1. Switching times may increase for V or increased Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 ...
... IXYS All rights reserved IXGQ 35N120BD1 ...
... IXYS reserves the right to change limits, test conditions, and dimensions. IXGQ 35N120BD1 ...
... IXYS All rights reserved IXGQ 35N120BD1 ...
... T VJ Fig. 21. Dynamic parameters versus K thJC 0.1 0.01 0.001 0.00001 0.0001 0.001 Fig. 24. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. 2000 T = 100° 600V R nC 1500 20A 10A 1000 500 0 100 A/µ ...
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