IXGQ35N120BD1 IXYS, IXGQ35N120BD1 Datasheet - Page 6

• Manufacturer Part Number: IXGQ35N120BD1
• Description: IGBT 1200V 75A FRD TO-3P
• Manufacturer: IXYS

Specifications of IXGQ35N120BD1

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.3V @ 15V, 35A
• Current - Collector (ic) (max): 75A
• Power - Max: 400W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3P
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 18. Forward current I
Fig. 21. Dynamic parameters Q
Fig. 24. Transient thermal resistance junction to case
Z
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
30
25
20
15
10
10
A
5
0
1
0
0
T
T
versus T
VJ
VJ
=150°C
=100°C
1
40
I
RM
Q
r
VJ
0.0001
2
80
T
F
3
VJ
T
versus V
V
120
VJ
F
= 25°C
r
°C
, I
4
0.001
RM
V
160
F
Q
t
rr
r
2000
1500
1000
Fig. 19. Reverse recovery charge Q
Fig. 22. Recovery time t
150
140
130
120
110
100
500
nC
ns
90
0
100
0.01
0
T
V
VJ
R
= 100°C
= 600V
versus -di
200
I
I
I
F
F
F
= 20A
= 10A
= 5A
400
F
I
I
I
0.1
/dt
F
F
F
= 20A
= 10A
= 5A
-di
600
F
-di
T
V
/dt
rr
VJ
R
t
F
versus -di
= 100°C
/dt
= 600V
A/µs
s
800
A/µs
DSEP 8-12A
1000
1000
1
F
/dt
r
I
V
RM
FR
Fig. 20. Peak reverse current I
120
Constants for Z
Fig. 23. Peak forward voltage V
40
30
20
10
80
40
A
V
0
0
1
2
3
i
0
0
T
V
t
I
I
I
VJ
R
fr
F
F
F
= 20A
= 10A
= 5A
= 100°C
= 600V
200
200
versus -di
versus di
R
1.449
0.558
0.493
thi
400
400
IXGQ 35N120BD1
thJC
(K/W)
F
calculation:
/dt
F
/dt
600
600
di
-di
T
I
F
F
V
/dt
VJ
F
FR
/dt
= 100°C
= 10A
A/µs
A/µs
800
800
t
0.0052
0.0003
0.017
i
(s)
RM
1000
1000
FR
and t
1.2
µs
0.8
0.4
0.0
t
fr
fr