IXGT32N60BD1 IXYS, IXGT32N60BD1 Datasheet
IXGT32N60BD1
Specifications of IXGT32N60BD1
Related parts for IXGT32N60BD1
IXGT32N60BD1 Summary of contents
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... V GE(th 0.8 • CES CE CES GES CE(sat) C C90 GE © 2003 IXYS All rights reserved IXGH 32N60B IXGT 32N60B IXGH 32N60BD1 IXGT 32N60BD1 Maximum Ratings 600 = 1 M 600 120 = 0.8 V CES 200 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 300 6 4 Characteristic Values ...
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... 360 -di/dt = 100 thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXGH 32N60B IXGH 32N60BD1 IXGT 32N60B Characteristic Values ( unless otherwise specified) J min. typ. max 2700 ...
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... CE Fig. 3. Saturation Voltage Characteristics 100 V = 10V 125° 25° Volts GE Fig. 5. Admittance Curves © 2003 IXYS All rights reserved IXGH 32N60B IXGH 32N60BD1 IXGT 32N60B 200 V = 15V GE 160 13V 11V 9V 7V 120 Fig. 2. Extended Output Characteristics 1.75 1.50 1.25 1.00 0.75 ...
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... D=0.1 D=0.05 D=0.02 D=0.01 0.01 Single pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXGH 32N60B IXGH 32N60BD1 IXGT 32N60B 5 2.5 4 2.0 (ON) 1.5 3 ...
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... T VJ Fig. 15 Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.00001 0.0001 0.001 Fig. 18 Transient thermal resistance junction to case © 2003 IXYS All rights reserved IXGH 32N60B IXGH 32N60BD1 IXGT 32N60B 1000 T = 100° 300V nC R 800 I = 60A 30A 15A ...