IXGT32N60BD1 IXYS, IXGT32N60BD1 Datasheet - Page 5

• Manufacturer Part Number: IXGT32N60BD1
• Description: IGBT 60A 600V TO-268
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGT32N60BD1

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 32A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 32
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 85
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.2
• Rthjc, Max, Igbt, (°c/w): 0.62
• If, Tj=110°c, Diode, (a): 32
• Rthjc, Max, Diode, (ºc/w): 1
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Fig. 12 Forward current I
Fig. 15 Dynamic parameters Q
Fig. 18 Transient thermal resistance junction to case
© 2003 IXYS All rights reserved
Z
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
A
0.00001
60
50
40
30
20
10
0
1
0
0
T
T
VJ
VJ
versus T
=100°C
=150°C
40
1
I
RM
Q
r
0.0001
VJ
80
2
T
VJ
F
T
V
120
VJ
versus V
F
=25°C
3
°C
r
, I
0.001
V
160
RM
F
t
rr
Q
1000
Fig. 13 Reverse recovery charge Q
Fig. 16 Recovery time t
r
800
600
400
200
nC
90
80
70
60
ns
0
100
0.01
0
T
V
VJ
R
= 100°C
= 300V
200
versus -di
I
I
I
F
F
F
400
= 60A
= 30A
= 15A
I
I
I
0.1
F
F
F
F
/dt
= 60A
= 30A
= 15A
-di
600
F
-di
/dt
T
V
VJ
t
F
R
rr
/dt
= 100°C
= 300V
versus -di
A/µs
s
800
A/µs
DSEP 29-06
IXGH 32N60B IXGH 32N60BD1
IXGT 32N60B
1000
1000
1
F
/dt
r
I
V
RM
FR
Fig. 14 Peak reverse current I
Constants for Z
30
25
20
15
10
20
15
10
Fig. 17 Peak forward voltage V
t
A
fr
5
0
V
5
0
1
2
3
0
0
i
T
I
t
T
V
F
fr
VJ
VJ
R
= 100°C
= 30A
= 100°C
= 300V
200
200
versus -di
versus di
I
I
I
F
F
F
R
0.502
0.193
0.205
IXGT 32N60BD1
= 60A
= 30A
= 15A
400
400
thi
thJC
(K/W)
V
FR
F
calculation:
/dt
F
600
600
/dt
di
-di
F
/dt
F
/dt
A/µs
A/µs
800
800
t
0.0052
0.0003
0.0162
i
(s)
1000
1000
RM
FR
1.00
0.75
0.50
0.25
0.00
µs
and
t
fr