IXBH24N170 IXYS, IXBH24N170 Datasheet - Page 2

• Manufacturer Part Number: IXBH24N170
• Description: IGBT BIMOSFET 1500V 24A TO-247
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBH24N170

• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 24A
• Current - Collector (ic) (max): 60A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vces, (v): 1700
• Ic25, Tc=25°c, (a): 60
• Ic90, Tc=90°c, (a): 24
• Vce(sat), Typ, Tj=25°c, (v): 2.5
• Tf Typ, Tj=25°c, (ns): 750
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.5
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Details

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
t
t
t
t
t
t
R
R
Reverse Diode
Symbol Test Conditions
(T
V
t
I
Note 1. Pulse test, t
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
fs
F
ies
oes
res
g
ge
gc
thJC
thCS
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
Resistive Switching Times, T
I
V
Resistive Switching Times, T
I
V
I
V
I
V
I
(TO-247)
I
C
C
F
C
C
F
CE
CE
R
CE
= 24A, V
= 12A, V
= I
= I
= I
= I
= 100V
= 850V, R
= 850V, R
Test Conditions
= 25V, V
C110
C110
C110
C110
ADVANCE TECHNICAL INFORMATION
≤
, V
, V
, V
, V
300μs, duty cycle, d
GE
GE
GE
GE
GE
CE
GE
= 0V
= 15V
= 15V
= 0V, -di
= 15V, V
= 10V, Note 1
G
G
= 0V, f = 1MHz
= 10
= 10
4,835,592
4,881,106
Ω
Ω
F
CE
/dt = 100A/μs
= 0.5 • V
4,931,844
5,017,508
5,034,796
≤
J
J
2%.
= 25°C
= 125°C
CES
5,049,961
5,063,307
5,187,117
Min.
15
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
Min.
Typ.
2790
140
315
155
325
960
0.21
6,162,665
6,259,123 B1
6,306,728 B1
163
750
60
16
60
33
82
35
25
1.06
Typ.
26
0.50
Max.
Max.
6,404,065 B1
6,534,343
6,583,505
2.8
°
°
C/W
C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
μs
V
A
S
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXBH) Outline
TO-268 (IXBT) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
1
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
2
3 - Source
.4
7,005,734 B2
7,063,975 B2
3
21.46
16.26
20.32
IXBH24N170
IXBT24N170
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
∅ P
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216