IXBH24N170 IXYS, IXBH24N170 Datasheet - Page 4

• Manufacturer Part Number: IXBH24N170
• Description: IGBT BIMOSFET 1500V 24A TO-247
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBH24N170

• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 24A
• Current - Collector (ic) (max): 60A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vces, (v): 1700
• Ic25, Tc=25°c, (a): 60
• Ic90, Tc=90°c, (a): 24
• Vce(sat), Typ, Tj=25°c, (v): 2.5
• Tf Typ, Tj=25°c, (ns): 750
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.5
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Details

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
50
45
40
35
30
25
20
15
10
16
14
12
10
60
50
40
30
20
10
5
0
8
6
4
2
0
0
200
0
0
T
R
dv / dt < 10V / ns
V
I
I
10
C
G
J
G
CE
= 125ºC
= 24A
= 10mA
= 10Ω
400
= 850V
20
Fig. 11. Reverse-Bias Safe Operating Area
20
600
30
40
Fig. 7. Transconductance
40
Fig. 9. Gate Charge
800
Q
G
60
50
- NanoCoulombs
I
V
C
CE
- Amperes
1000
- Volts
60
80
70
1200
100
80
T
J
= - 40ºC
1400
125ºC
90
25ºC
120
100
1600
110
140
1800
120
10,000
1,000
1.000
0.100
0.010
0.001
100
80
70
60
50
40
30
20
10
10
0.00001
0
0.0
0
f = 1 MHz
Fig. 12. Maximum Transient Thermal Impedance
0.4
5
0.0001
Fig. 8. Forward Voltage Drop of
0.8
10
0.001
Fig. 10. Capacitance
1.2
Pulse Width - Seconds
15
Intrinsic Diode
V
V
CE
F
- Volts
1.6
0.01
20
- Volts
2.0
25
0.1
C ies
C oes
C res
IXBH24N170
IXBT24N170
T
J
= 125ºC
2.4
30
1
2.8
35
T
J
= 25ºC
3.2
40
10