IXBK55N300 IXYS, IXBK55N300 Datasheet - Page 5

• Manufacturer Part Number: IXBK55N300
• Description: IGBT 3000V 130A 625W TO264
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBK55N300

• Voltage - Collector Emitter Breakdown (max): 3000V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 55A
• Current - Collector (ic) (max): 130A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vces, (v): 3000
• Ic25, Tc=25°c, (a): 130
• Ic90, Tc=90°c, (a): 55
• Ic110, Tc=110°c, (a): -
• Vce(sat), Typ, Tj=25°c, (v): 3.2
• Tf Typ, Tj=25°c, (ns): 268
• Tfi Typ, Tj=25°c, (ns): -
• Gate Drive, (v): -
• Rthjc, Max, (k/w): 0.20
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

© 2009 IXYS CORPORATION, All Rights Reserved
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380
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25
40
2
I
C
= 220A
R
V
V
3
T
V
GE
CE
t
G
35
60
J
CE
r
= 2Ω
= 125ºC, V
= 15V
= 1250V
Switching Times vs. Collector Current
= 850V
4
Switching Times vs. Gate Resistance
Rise Time vs. Junction Temperature
45
80
5
Fig. 17. Resistive Turn-off
Fig. 15. Resistive Turn-on
GE
t
d(on)
I
6
Fig. 13. Resistive Turn-on
100
= 15V
C
55
= 110A
- - - -
T
7
J
- Degrees Centigrade
I
120
C
65
R
I
C
G
- Amperes
8
= 220A
- Ohms
140
9
75
I
R
V
t
C
10
CE
T
f
G
J
= 110A
= 2Ω, V
= 125ºC, 25ºC
160
= 1250V
85
11
GE
180
95
12
t
= 15V
d(off)
13
200
105
- - - -
14
220
115
15
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2
R
V
V
I
3
t
T
V
GE
CE
35
G
Switching Times vs. Junction Temperature
C
f
J
CE
= 2Ω
60
= 110A
= 125ºC, V
= 15V
= 1250V
= 1250V
Switching Times vs. Gate Resistance
4
45
80
5
Fig. 18. Resistive Turn-off
Rise Time vs. Collector Current
Fig. 16. Resistive Turn-off
GE
t
55
d(off
6
= 15V
Fig. 14. Resistive Turn-on
T
)
100
J
- - - -
- Degrees Centigrade
65
I
7
C
= 110A
R
I
8
120
I
G
C
C
75
= 220A
- Ohms
- Amperes
T
T
J
J
9
= 125ºC
= 25ºC
85
140
10
R
V
t
CE
f
G
= 2Ω, V
= 1250V
11
95
160
IXBK55N300
IXBX55N300
12
GE
I
105
C
= 15V
= 220A
t
d(off)
180
13
IXYS REF: B_55N300 (8T) 6-08-09
115
- - - -
14
200
125
15
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