GT10Q301(Q) Toshiba, GT10Q301(Q) Datasheet - Page 6

• Manufacturer Part Number: GT10Q301(Q)
• Description: IGBT DUAL 1200V 10A TO-3PN
• Manufacturer: Toshiba

Specifications of GT10Q301(Q)

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 10A
• Power - Max: 140W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

10
10
10
10
10
10
10
10
−1
−2
−3
−4
2
1
0
−5
10
−4
10
−3
Pulse width t
10
r
th (t)
−2
– t
10
w
−1
w
Diode stage
IGBT stage
(s)
10
Tc = 25°C
0
10
1
10
2
6
GT10Q301
2006-10-31