PMBFJ112,215 NXP Semiconductors, PMBFJ112,215 Datasheet
PMBFJ112,215
Specifications of PMBFJ112,215
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PMBFJ112,215 Summary of contents
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PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 — 4 August 2004 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low R 1.3 Applications ...
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Philips Semiconductors 3. Ordering information Table 2: Type number PMBFJ111 PMBFJ112 PMBFJ113 4. Marking Table 3: Type number PMBFJ111 PMBFJ112 PMBFJ113 [ Made in Hong Kong * = t: Made in Malaysia * = W: Made in ...
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Philips Semiconductors 7. Static characteristics Table 6: Static characteristics Symbol Parameter I gate-source leakage current GSS I drain-source leakage current DSS PMBFJ111 PMBFJ112 PMBFJ113 V gate-source breakdown voltage (BR)GSS V gate-source cut-off voltage GSoff PMBFJ111 ...
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Philips Semiconductors Fig 1. Switching circuit. Fig 2. Input and output waveforms. 9397 750 13402 Product data sheet PMBFJ111; PMBFJ112; PMBFJ113 10 90 ...
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Philips Semiconductors 9. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig ...
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Philips Semiconductors 10. Revision history Table 8: Revision history Document ID Release date Data sheet status PMBFJ111_112_113_ 20040804 3 • Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of ...
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Philips Semiconductors 11. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...
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Philips Semiconductors 15. Contents 1 Product profi 1.1 General description ...