PMBFJ112,215 NXP Semiconductors, PMBFJ112,215 Datasheet - Page 5
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PMBFJ112,215
Manufacturer Part Number
PMBFJ112,215
Description
MOSFET N-CH 40V 5MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PMBFJ112215.pdf
(8 pages)
Specifications of PMBFJ112,215
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Package / Case
SOT-23
Resistance Drain-source Rds (on)
50 Ohms
Drain Source Voltage Vds
40 V
Gate-source Cutoff Voltage
- 5 V to - 1 V
Gate-source Breakdown Voltage
- 40 V
Drain Current (idss At Vgs=0)
5 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933929740215::PMBFJ112 T/R::PMBFJ112 T/R
Philips Semiconductors
9. Package outline
Fig 3. Package outline.
9397 750 13402
Product data sheet
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
PMBFJ111; PMBFJ112; PMBFJ113
JEDEC
1.4
1.2
E
REFERENCES
0
Rev. 03 — 4 August 2004
2
1.9
e
w
0.95
B
M
e
1
scale
B
EIAJ
1
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
EUROPEAN
w
L p
N-channel junction FETs
A
Q
c
X
v
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23
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