PMBFJ309,215 NXP Semiconductors, PMBFJ309,215 Datasheet - Page 12

• Manufacturer Part Number: PMBFJ309,215
• Description: MOSFET N-CH 25V 30MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ309,215

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Package / Case: SOT-23
• Resistance Drain-source Rds (on): 50 Ohms
• Drain Source Voltage Vds: 25 V
• Gate-source Cutoff Voltage: - 4 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: - 25 V
• Drain Current (idss At Vgs=0): 12 mA to 30 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934008990215::PMBFJ309 T/R::PMBFJ309 T/R

Philips Semiconductors
10. Revision history
Table 9:
9397 750 13403
Product data sheet
Document ID
PMBFJ308_309_310_3
Modifications:
PMBFJ308_309_310_2
Revision history
Release date
20040723
19960911
•
•
The format of this data sheet has been redesigned to comply with the new presentation
and information standard of Philips Semiconductors.
Table 4
“Marking”: added new marking codes.
PMBFJ308; PMBFJ309; PMBFJ310
Data sheet status
Product data sheet
Product specification -
Rev. 03 — 23 July 2004
Change
notice
-
N-channel silicon field-effect transistors
Order number
9397 750 13403
9397 750 01141
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Supersedes
PMBFJ308_309_310_2
-
12 of 14