PMBFJ309,215 NXP Semiconductors, PMBFJ309,215 Datasheet - Page 7

• Manufacturer Part Number: PMBFJ309,215
• Description: MOSFET N-CH 25V 30MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ309,215

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Package / Case: SOT-23
• Resistance Drain-source Rds (on): 50 Ohms
• Drain Source Voltage Vds: 25 V
• Gate-source Cutoff Voltage: - 4 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: - 25 V
• Drain Current (idss At Vgs=0): 12 mA to 30 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934008990215::PMBFJ309 T/R::PMBFJ309 T/R

Philips Semiconductors
9397 750 13403
Product data sheet
Fig 10. Typical output characteristics; PMBFJ310.
Fig 12. Reverse transfer capacitance as a function of
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
I
D
(pF)
C
40
30
20
10
rs
0
4
3
2
1
0
T
V
gate-source voltage; typical values.
0
10
j
GS
GS
GS
GS
GS
GS
DS
= 25 C.
= 0 V.
= 0.5 V.
= 1 V.
= 1.5 V.
= 2 V.
= 2.5 V.
= 10 V; T
8
4
j
= 25 C.
6
8
4
12
PMBFJ308; PMBFJ309; PMBFJ310
(3)
(1)
(2)
(4)
(5)
(6)
V
2
DS
V
mcd217
GS
mcd224
(V)
(V)
16
0
Rev. 03 — 23 July 2004
Fig 11. Typical transfer characteristics; PMBFJ310.
Fig 13. Input capacitance as a function of gate-source
(mA)
(pF)
C
I
V
V
voltage; typical values.
D
10
40
30
20
10
is
DS
8
6
4
2
0
DS
0
10
4
= 10 V; T
= 10 V; T
N-channel silicon field-effect transistors
8
j
j
= 25 C.
= 25 C.
3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6
2
4
1
2
V
V
GS
GS
mcd214
mcd223
(V)
(V)
0
0
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