IRF7501TRPBF International Rectifier, IRF7501TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7501TRPBF
• Description: MOSFET N-CH DUAL 20V 2.4A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7501TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 135 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 1.2 W
• Gate Charge Qg: 5.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7501TRPBF; IRF7501TRPBFTR; Q2235500; Q3145294

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0.01
100
100
0.1
0.1
10
10
1
1
Fig 1. Typical Output Characteristics
1.5
0.1
Fig 3. Typical Transfer Characteristics
T = 150°C
TOP
BOTTOM 1.5V
J
V
V
GS
2.0
DS
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
T = 25°C
J
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
2.5
1
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
1.5V
3.0
DS
J
= 10V
3.5
4.0
10
A
A
100
0.01
0.1
100
10
0.1
10
1
1
0.4
0.1
Fig 7. Typical Source-Drain Diode
Fig 2. Typical Output Characteristics
TOP
BOTTOM 1.5V
T = 150°C
J
0.6
V
V
SD
DS
7.5V
VGS
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
Forward Voltage
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.8
T = 25°C
J
1.0
1
IRF7501PbF
1.2
20µs PULSE WIDTH
T = 150°C
J
1.5V
1.4
V
GS
1.6
= 0V
3
1.8
10
A
A