IRF7501TRPBF International Rectifier, IRF7501TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7501TRPBF
• Description: MOSFET N-CH DUAL 20V 2.4A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7501TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 135 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 1.2 W
• Gate Charge Qg: 5.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7501TRPBF; IRF7501TRPBFTR; Q2235500; Q3145294

IRF7501PbF
V
Fig 11a. Basic Gate Charge Waveform
G
6
Q
GS
Charge
Q
Q
GD
G
Fig 12a. Switching Time Test Circuit
Fig 12b. Switching Time Waveforms
V
90%
10%
V
DS
GS
t
d(on)
t
r
≤ 0.1 %
≤ 1
t
d(off)
t
f
Fig 11b. Gate Charge Test Circuit
12V
V
GS
+
-
Same Type as D.U.T.
Current Regulator
.2µF
50KΩ
3mA
Current Sampling Resistors
.3µF
I
G
www.irf.com
D.U.T.
I
D
+
-
V
DS