NTHD4508NT1G ON Semiconductor, NTHD4508NT1G Datasheet - Page 2

• Manufacturer Part Number: NTHD4508NT1G
• Description: MOSFET 2N-CH 20V 3.1A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD4508NT1G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 1.13W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1130 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD4508NT1GOSTR

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(T
J
= 25 C unless otherwise noted)
V
Symbol
V
Q
R
Q
t
(BR)DSS
C
C
t
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
Q
DS(on)
d(ON)
V
g
DSS
GSS
G(TH)
t
OSS
RSS
RR
ta
tb
FS
ISS
t
t
SD
GS
GD
RR
r
f
(
)
http://onsemi.com
NTHD4508N
V
GS
V
V
V
V
= 0 V, V
V
V
V
V
V
GS
GS
GS
GS
V
I
V
V
DS
GS
D
GS
V
V
V
2
GS
DS
GS
GS
GS
GS
GS
= 3.1 A, R
dI
Test Conditions
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
= 0 V, V
= 0 V, f = 1.0 MHz,
= V
S
= 0 V, V
= 10 V, I
= 0 V, I
= 0 V, I
= 4.5, I
= 2.5, I
V
V
= 0 V, I
/dt = 100 A/ms
0 V f
V
I
DS
D
DS
DS
GS
DS
= 3.1 A
= 16 V, T
, I
= 10 V
= 10 V
= 0 V
GS
D
S
S
D
D
S
DS
G
DS
DS
DS
DS
D
1 0 MH
= 1.5 A,
= 1.5 A,
= 250 mA
= 3.1 A
= 2.3 A
= 3.1 A
= "12 V
= 2.5 W
= 3.1 A
= 16 V
= 10 V,
= 10 V,
= 16 V,
= 16 V,
J
= 125 C
Min
0.6
20
0.75
12.5
Typ
180
6.0
2.6
0.5
0.6
0.7
5.0
3.0
9.0
3.5
6.0
60
80
80
25
15
10
"100
Max
1.15
115
1.0
1.2
4.0
6.0
10
75
10
30
20
Units
mW
mA
nA
pF
nC
nC
ns
ns
V
V
S
V