NTHD4508NT1G ON Semiconductor, NTHD4508NT1G Datasheet - Page 4

• Manufacturer Part Number: NTHD4508NT1G
• Description: MOSFET 2N-CH 20V 3.1A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD4508NT1G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 1.13W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1130 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD4508NT1GOSTR

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
400
300
200
100
10
1
0
10
1
V
I
V
Figure 9. Resistive Switching Time Variation
C
C
D
DD
GS
ISS
RSS
= 2.3 A
t
t
d(on)
d(off)
= 16 V
= 4.5 V
V
t
t
f
r
DS
5
Figure 7. Capacitance Variation
R
= 0 V
G
, GATE RESISTANCE (OHMS)
V
GS
vs. Gate Resistance
0
TYPICAL PERFORMANCE CURVES
V
V
DS
GS
= 0 V
10
5
10
T
J
15
C
= 25 C
OSS
http://onsemi.com
NTHD4508N
100
20
4
5
4
3
2
1
0
0
7
6
5
4
3
2
1
0
(T
0.3
Q
Drain−to−Source Voltage vs. Total Charge
J
Figure 10. Diode Forward Voltage vs. Current
= 25 C unless otherwise noted)
GS
V
T
0.5
J
GS
V
= 25 C
SD
Figure 8. Gate−to−Source and
= 0 V
0.45
Q
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G
, TOTAL GATE CHARGE (nC)
Q
1
GD
0.6
Q
G
1.5
0.75
2
0.9
I
T
D
J
2.5
= 3.1 A
= 25 C
1.05
3
10
7.5
5.0
2.5
0
1.2