NTHD4508NT1G ON Semiconductor, NTHD4508NT1G Datasheet - Page 6

MOSFET 2N-CH 20V 3.1A CHIPFET

NTHD4508NT1G

Manufacturer Part Number
NTHD4508NT1G
Description
MOSFET 2N-CH 20V 3.1A CHIPFET
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTHD4508NT1G

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 3.1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
4nC @ 4.5V
Input Capacitance (ciss) @ Vds
180pF @ 10V
Power - Max
1.13W
Mounting Type
Surface Mount
Package / Case
8-ChipFET™
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.075 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3 A
Power Dissipation
1130 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTHD4508NT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTHD4508NT1G
Manufacturer:
ON Semiconductor
Quantity:
35 997
Part Number:
NTHD4508NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
PUBLICATION ORDERING INFORMATION
ChipFET is a trademark of Vishay Siliconix.
LITERATURE FULFILLMENT:
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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S
8
1
7
2
A
G
6
3
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
5
4
D
B
C
0.05 (0.002)
M
J
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
PACKAGE DIMENSIONS
http://onsemi.com
CASE 1206A−03
NTHD4508N
K
ChipFET
ISSUE E
6
5
4
STYLE 2:
PIN 1. SOURCE 1
6
3
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
7
2
8
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
4. LEADFRAME TO MOLDED BODY OFFSET IN
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
6. NO MOLD FLASH ALLOWED ON THE TOP AND
7. 1206A−01 AND 1206A−02 OBSOLETE. NEW
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
Y14.5M, 1982.
PER SIDE.
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
BURRS.
BOTTOM LEAD SURFACE.
STANDARD IS 1206A−03.
DIM
M
A
B
C
D
G
J
K
L
S
MILLIMETERS
MIN
2.95
1.55
1.00
0.25
0.10
0.28
1.80
5
0.65 BSC
0.55 BSC
NOM
MAX
3.10
1.70
1.10
0.35
0.20
0.42
2.00
0.061
0.039
0.010
0.004
0.072
0.116
0.011
MIN
NTHD4508N/D
0.025 BSC
0.022 BSC
5
INCHES
NOM
0.122
0.067
0.043
0.014
0.008
0.017
MAX
0.080

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