NTHD4508NT1G ON Semiconductor, NTHD4508NT1G Datasheet - Page 3

• Manufacturer Part Number: NTHD4508NT1G
• Description: MOSFET 2N-CH 20V 3.1A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD4508NT1G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 1.13W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1130 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD4508NT1GOSTR

0.15
0.10
0.05
8
6
4
2
0
0
1.7
1.5
1.3
1.1
0.9
0.7
0
0
Figure 3. On−Resistance vs. Gate−to−Source
−50
1
V
I
V
D
V
DS
GS
Figure 1. On−Region Characteristics
= 3.1 A
GS
2.2 V
−25
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
1
= 4.5 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
V
V
GS
GS
T
J
= 5 V to 3 V
, JUNCTION TEMPERATURE ( C)
= 2.4 V
3
0
2
TYPICAL PERFORMANCE CURVES
4
Voltage
25
Temperature
5
3
50
6
1.8 V
1.6 V
1.4 V
2 V
75
4
7
I
T
T
100
D
8
J
J
= 3.1 A
= 25 C
= 25 C
5
http://onsemi.com
9
125
NTHD4508N
10
6
150
3
0.07
0.04
100
0.1
(T
10
1
8
6
4
2
0
J
2
Figure 4. On−Resistance vs. Drain Current and
1
0
= 25 C unless otherwise noted)
V
GS
Figure 6. Drain−to−Source Leakage Current
V
T
4
V
J
V
DS
= 0 V
DS
GS
= 25 C
0.5
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
10 V
I
6
D,
DRAIN CURRENT (AMPS)
25 C
3
1
8
T
Gate Voltage
C
V
V
= −55 C
GS
T
vs. Voltage
GS
10
J
= 4.5 V
= 100 C
= 2.5 V
1.5
12
100 C
5
14
2
16
2.5
7
18
20
3